发明名称 |
Wiring material for semiconductor device and method for forming wiring pattern therewith |
摘要 |
A wiring material of a semiconductor device, which comprises aluminum as a major component and at least a surface layer of the wiring layer is alloyed with boron and silicon. A method for forming a wiring material of a semiconductor device, which comprises the steps of: forming a wiring pattern comprising aluminum as a major component on a semiconductor element; and ion-implanting one of boron and a mixture of boron and silicon in the wiring pattern and alloying at least a surface layer of the wiring pattern to form an alloy layer containing aluminum, boron and silicon.
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申请公布号 |
US4502207(A) |
申请公布日期 |
1985.03.05 |
申请号 |
US19830562212 |
申请日期 |
1983.12.16 |
申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
OHSHIMA, JIRO;ABE, MASAHIRO;KOSHINO, YUTAKA |
分类号 |
H01L21/3215;H01L23/532;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/3215 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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