| 摘要 |
PURPOSE:To enable to form a homogeneous insulating film in a short time by a method wherein an energy beam is projected to the interface between a semiconductor layer and an insulator layer or on the interface thereof and part of the insulator layer, which is located in the vicinity of the interface. CONSTITUTION:A laser beam (a), which is an energy beam, is irradiated on a substrate 2 consisting of a multilayer construction; which is constituted of an element 10, a silicon layer 11 and a silicon oxide film 12 to be formed by a CVD method; through a quartz window 5 in the atmosphere in a reaction chamber 4, such as in the atmosphere of oxygen gas. The laser beam (a) is transmitted through the silicon oxide film 12, which is an insulator layer, and is absorbed in the interfacial part (b) of the silicon layer 12, which is a semiconductor layer, the interfacial part (b) is locally heatfused in a short time and the silicon oxide film 12 is made dense as a reaction layer. By this way, a part of the insualtor layer, which is located on the interfacial part (b) between the silicon layer 11 and the silicon oxide layer 12, can be modified in a short time and locally. |
