| 摘要 |
PURPOSE:To eliminate the absorption of a laser light at a reflecting surface and the temperature rise occurred by the absorption by bending and providing an active layer near the laser light emitting mirror. CONSTITUTION:An active layer 4 is bent near the reflecting surfaces 10, 11 for emitting laser lights 8, 9. The element is formed by forming Ga1-xAlxAs and GaAs layers 3, 4 on an N type GaAs substrate formed with grooves designated by hatched lines (e), (g) and then performing typical laser element forming steps. Thus, the laser light is not emitted via the active layer from the reflecting surfaces but emitted from a clad layer having wide forbidden band width adjacent to the active layer. Accordingly, the absorption of the laser light at the reflecting surface and the temperature rise by the absorption can be eliminated. |
