| 摘要 |
PURPOSE:To provide protecting function of a transistor against an overvoltage by providing a quasi-base region independently adjacent to a base region, and connecting via wirings between the quasi-base electrode and an emitter electrode. CONSTITUTION:When a positive potential is applied to a collector electrode produced from the back surface of a semiconductor substrate 1 and a negative potential is applied to emitter electrode wirings 6, if the prescribed voltage or higher is applied, the portion immediately below the aluminum emitter electrode wirings 6 is inverted to form an inverting layer 7. At this time, the base and the emitter of the transistor are shortcircuited via the wirings 6, a quasi-base region 3 and the layer 7, and the transistor is turned OFF. |
