| 摘要 |
PURPOSE:To perform a manufacturing of a semiconductor device without pellet crack by increasing the thickness of a bonding pad. CONSTITUTION:After a base region 11 and an emitter region 13 are formed on a semiconductor substrate 11, a hole for leading an electrode is formed at an oxidized film 14 on the surface. Aluminum is uniformly deposited thinly in the thickness of approx. 1-2mum, and selectively removed by etching to form an emitter electrode 15 and a base electrode 16. A photoresist film is covered on the portion except the portions to become bonding pads of wirings of the electrodes 15, 16. Then, an aluminum layer is uniformly deposited on the entire surface, the photoresist film is burned and scattered at a high temperature, the aluminum layer formed on the film is floated, the floated aluminum is removed to form thick bonding pads 18, 19. Thus, a pellet crack does not occur even by bonding hard fine metal wirings. |
