| 摘要 |
PURPOSE:To obtain a semiconductor gas sensor, which can detect reducing gas at a normal temperature, by using WO3 as a compound semiconductor of a sensor. CONSTITUTION:A conductive film 2 comprising In2O3 or the like is evaporated on an insulating substrate 1 as an electrode. A layer 3 of WO3 is evaporated thereon as a compound semiconductor. An electrode 4 using Pd is formed as a catalyst metal. Electrode leads 5 and 6 are extracted from the conductive film 2 and the electrode 4, respectively. Thus, the semiconductor sensor, which can detect reducing gas at a normal temperature can be obtained. |
