SURGE PROTECTING CIRCUIT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To protect a semiconductor device against a surge by connecting a plurality of MOS field effect transistors in series between a surge protecting portion and the prescribed power source. CONSTITUTION:MOS field effect transistors 11, 13 are connected in series between a surge protecting portion 12 and a ground. With such a construction, a voltage between the gate and the drain of the transistor 11 is reduced by separating the transistor 13.