| 摘要 |
PURPOSE:To compactly form a device and to facilitate the operation by disposing a boron nitride in a vacuum chamber in a method of reactively ion etching (RIE) an aluminum film to eliminate a piping system for supplying BCl3 gas without effect of adding BCl3 gas. CONSTITUTION:A sintered plate of boron nitride (BN) having a size substantially the same as a cathode electrode is disposed on the cathode electrode in a vacuum chamber. A wafer is placed on the boron nitride plate, and an aluminum film is reactively ion etched. Even if the etching of the aluminum is performed after the chamber is exposed with the atmosphere, the etching rate of 400nm/min can be immediately obtained. |
