| 摘要 |
1. An integrated semiconductor circuit comprising a substrate (1) consisting of silicon and in and on which are produced the elements which form the circuit and which have diffused silicon zones (2), and an external contact conductor path plane (6) which consists of aluminium or an aluminium alloy and which is connected to the diffused silicon zones (2) of the circuit which are to be contacted, using a metal silicide intermediate layer (5), characterised in that the intermediate layer (5) consists of tantalum disilicide, in which the tantalum content of the compound is greater than that corresponding to stoichiometric tantalum disilicide, as a result of which the diffusion of aluminium and silicon into the tantalum disilicide is prevented. |
