| 摘要 |
PURPOSE:To enable to treat the surface of a wafer having uniform distribution on the surface by a method wherein susceptors holding the wafers, and partitions provided with gas circulating holes at the central parts and having the outer diameter the same with the inner diameter of a reaction chamber are arranged alternately. CONSTITUTION:Partitions 10 are provided with gas circulating holes 11 at the centers, and formed slidably in a reaction tube according to the frame parts 12 thereof. Susceptor holders 13 hold susceptors 16 according to pawl parts 15 provided with grooves 14, and formed slidably in the reaction tube. The partitions 10 are provided coming in contact with the inside wall of the raction tube 1, and moreover the diameter of the susceptor 16 is properly smaller as compared with the partition, and positioned along the central axis of the reaction tube 1. Reaction gas plasma extends in the reaction tube 1 along the susceptor 16 passing the gas circulating hole 11 positioned at the center of the partition 10, passes again in the gas circulating hole 11 of the adjoining partition 10, and this circulation is repeated to be discharged. Because radicals generated according to reaction gas plasma is circulated forcibly along the surfaces of wafers 5 in such a way, film thickness, distribution of film thickness of etching, etc. can be equalized. |
