SUBSTRATE MATERIAL FOR THIN FILM MAGNETIC HEAD WITH INSULATING FILM

摘要

PURPOSE:To perform the crystal systematic matching of insulating film and substrate made of Al2O3 remarkably improving the coating strength by a method wherein an Al2O3 base thin film comprising the same components as those of substrate and more Al2O3 content than that of substrate is laid between the insulating thin film and the substrate as an intermediate layer. CONSTITUTION:An Al2O3 base thin film to be laid between an Al2O3 base thin film for electric insulation as an intermediate layer shall be e.g. in case the substrate is composed of 65% Al2O3-35% TiC base substrate, Al2O3-TiC base thin film comprising 65% or more Al2O3 and 35% or less TiC. The total thickness of Al2O3 base thin film as an intermediate layer and another insulating Al2O3 thin film shall be 1-50mum. While the thickness of the Al2O3 base thin film as the intermediate layer shall exceed 0.1mum to augment the adhesion between the substrate and the insulating Al2O3 thin film. Besides, the surface roughness of the Al2O3 base substrate shall not exceed 1,000Angstrom to augment the adhesion to the insulating Al2O3 thin film through the intermediate of the Al2O3 base thin film as the intermediary layer.