| 摘要 |
PURPOSE:To reduce base resistance by a silicide film having excellent conductivity even when a base electrode is formed where comparatively separate from an emitter region, and to increase the speed of operation of a transistor by forming the silicide film on the surface of a base region. CONSTITUTION:A metal such as platinum which can form a silicide on the whole surface of a substrate is attached through sputtering deposition, etc. and thermally treated. Consequently, the metal and silicon react to form a silicide film in a silicon section under the attached metal. On the other hand, the metal does not react and remains as it is in an SiO2 film 5 or Si3N4 film section under the attached metal. Accordingly, when the whole surface of the substrate is etched by a proper cleaning fluid, the silicide film 13 shaped on a base region 7 and a polysilicon layer 12 remains as it is because the metal on the SiO2 film 5 can be removed far more simply than the silicide. |
