发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent the breakdown of a CMOS semiconductor device by forming a resistor for preventing floating in a pellet for the semiconductor device or in a package. CONSTITUTION:Input signals such as clock signals are transmitted over an internal circuit B through R1. When signals are not applied to an external terminal A, a resistor R2 for preventing floating grounds a gate in an MOSFETT2. Consequently, feedthrough currents flowing through a series circuit of T2 and T3 are prevented while electrostatic breakdown is obviated. When a resistor R3 for preventing floating is formed in a package PKG, a resistor R2 for preventing feedthrough currents is shaped outside an element-that is, in the package PKG, as the resistor R3, and the resistor R3 is grounded. There are the resistor R1 and T1 (an element protective diode) in a semiconductor chip IC, and supply voltage applied at a terminal C and ground potential are applied as supply voltage and ground potential as they are on an input terminal, thus flowing no feedthrough currents in the element.
申请公布号 JPS6038858(A) 申请公布日期 1985.02.28
申请号 JP19830146326 申请日期 1983.08.12
申请人 HITACHI SEISAKUSHO KK 发明人 MASUDA KOUJI;IKUZAKI KUNIHIKO;IWASA SHINICHI;UCHIDA MAKIO
分类号 H01L21/8238;H01L27/02;H01L27/06;H01L27/092 主分类号 H01L21/8238
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