| 摘要 |
PURPOSE:To enable to form a single crystal silicon layer without forming its area in a larger one and to easily form a semiconductor device on an insulating film by a method wherein element isolating regions and the seed region of a crystal to be used for forming the single crystal silicon layer are made to commonly possess. CONSTITUTION:An insulating film 2 is selectively formed on a single crystal silicon substrate 1 for providing exposed parts, a silicon layer 3 is formed thereon, a polycrystalline silicon layer grown on the insulating film 2 is single-crystallized with an exposed single crystal part as a core, and at the same time, a nitriding film 4 is formed on the whole surface, a photo resist film 5 is formed in recessed parts created on the exposed parts, the nitriding film 4 is selectively removed using the photo resist film 5 as a mask. After the photo resist film 5 was removed, a selective oxidation is performed for forming an oxide film 6 using the nitriding film 4 as a mask and an etching is performed using the oxide film 6 as a mask until the silicon substrate 1 and the single crystal silicon layer 3 are completely separated. Then, a silicon oxide film 7 is buried in groove parts and element isolating regions 102 and 103 are formed. After the silicon oxide film 7 on the single crystal silicon layer 3 was removed, an MOS semiconductor element is formed on the single crystal silicon layer 3. |
