| 摘要 |
PURPOSE:To contrive not to make water intrude below a part of a passivation film, where is located deeper than gaps, by a method wherein, even when water intrudes from an aperture formed in the passivation film, a passivation material, which has been interposingly inserted into the gaps, is used as a defensive wall. CONSTITUTION:In a semiconductor integrated circuit, a fuse 3 made of poly silicon, etc., is formed on a substrate 1 through an insulating film 2. In case a hole is opened in a passivation film 8 located at the fuse part, an aluminum layer 7b, which is used as a stopper when an etching is performed on the passivation film 8, and a poly silicon layer, which is used as a buffer material when an etching is performed on the aluminum layer, are kept having been previously formed on the fuse, and at the same time, a passivation material is also kept having been interposingly inserted fully in gaps between two layers of the aluminum layer for stopper and the poly solicon layer for buffer and the end part of an interlayer insulating film 5 on the peripheries of the aluminum layer and the poly silicon layer. |
