METHOD FOR MAKING SEMICONDUCTOR DEVICES CONTAINING DOPED AREAS OF N AND/OR P TYPE, PREFERABLY MOS OR DIPOLAR INTEGRATED CIRCUITS,申请号HU19810002405-传众专利搜索

发明名称	METHOD FOR MAKING SEMICONDUCTOR DEVICES CONTAINING DOPED AREAS OF N AND/OR P TYPE, PREFERABLY MOS OR DIPOLAR INTEGRATED CIRCUITS
摘要
申请公布号	HU185450(B)	申请公布日期	1985.02.28
申请号	HU19810002405	申请日期	1981.08.18
申请人	MTA KOEZPONTI FIZIKAI KUTATO INTEZETE,HU;MIKROELEKTRONIKAI VALLALAT,HU	发明人	BANYAI,FERENC,HU;GYIMESI,JENOE,HU;GYULAI,JOZSEF,HU;HEKSCH,FERENC,HU;KOSZA,GYOERGY,HU;LENART,MARTA,HU;MOHACSI,TIBOR,HU;PODMANICZKY,ISTVAN,HU;SANDOR,SZVETLANA,HU;SCHILLER,ROBERTNE,HU;TIMAR,JOZSEF,HU
分类号	H01L21/34;H01L27/10;(IPC1-7):H01L21/34	主分类号	H01L21/34
代理机构		代理人
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