| 摘要 |
PURPOSE:To further upgrade a higher integration of the IC by a method wherein an isolation region in a grooved isolation structure, wherein no bird's beak is generated, is formed at a part, where high integration is needed, and a thick oxide film is formed at a wide region other than the isolation region in such a way as to interposed between the grooved isolation structures. CONSTITUTION:A silicon dioxide film 2 is formed on the surface of a P type silicon semiconductor substrate 1, and after a silicon nitriding film 3 was formed thereon, grooves 4 are formed and the surface is partitioned into numerous regions. In addition to an element forming region 5, a region 6, where no element is formed, is also included. After an embedding material 9 consisting of such an insulator as a silicon dioxide, etc., was deposited on the whole surface of the substrate 1, the surface of the substrate 1 is flattened. After an oxidation-resistant silicon nitriding film 10 was deposited on the whole surface, a part corresponding to the region 6, where no element is formed, is selectively removed and a thick oxide film 11 is formed on the surface. The silicon nitriding film 10 and the silicon dioxide film 2 are removed, the silicon surface of the surface 1 is made to expose and an etching is performed on a part of the embedding material 9, where is appearing upwards from the substrate 1. As a result, the substrate 1 is completely flattened. |
