| 摘要 |
PURPOSE:To form a semiconductor thin film of wide area having excellent crystallizability by a method wherein impurities are introduced into an amorphous thin film in layer form, and they are brought into the state of solid phase epitaxial crystal. CONSTITUTION:Amorphous silicon 3 is coated on the single crystal silicon substrate 1 having the construction wherein the substrate is covered by a silicon dioxide film 2, on a part of which substrate surface is exposed and on the other region of which flat surface is formed. When arsenide of 7.5X10<14> ions/cm<2> at 80keV is ion-implanted after the amorphous silicon of approximately 300nm in thickness has been coated as above-mentioned, the implanted arsenide is distributed 5 in the maximum density on the region located in the vicinity of the surface in the approximate depth of 50nm. Then, when a heat treatment is performed on this sample at 600 deg.C for 2hr, an epitaxial single crystal semiconductor layer 4 can be obtained at the speed several times higher than that in the case where no arsenide ion implantation is performed. |
