发明名称 SHUNT BIAS TYPE MAGNETORESISTANCE ELEMENT
摘要 PURPOSE:To obtain the element suitable for a magnetoresistance effect head which offers a high output voltage and a proper bias magnetic field without a division of the output for the magnetic field by forming a Mo film on a Permalloy film formed on a substrate. CONSTITUTION:On the substrate 5 consisting of glass, firstly e.g. a Permalloy film 6 of 350Angstrom thick and next e.g. a Mo film 7 of 2,000Angstrom thick are vapor-deposited by electron beam, after which a conductor 8 is formed. The output voltage-signal magnetic field curve of this element almost does not show a division of the output for the magnetic field and the output voltage is high and a proper bias magnetic field is applied. The intensity of this bias magnetic field increases as a detection current increases. Accordingly, the proper intensity of the bias magnetic field can be obtained by flowing a proper detection current.
申请公布号 JPS6038892(A) 申请公布日期 1985.02.28
申请号 JP19830146383 申请日期 1983.08.12
申请人 HITACHI SEISAKUSHO KK 发明人 KITADA MASAHIRO;TANABE HIDEO;SHIMIZU NOBORU;SUENAGA MASAHIDE;TAKEURA TOORU;TAGUCHI YASUO
分类号 G11B5/39;H01L43/08 主分类号 G11B5/39
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