| 摘要 |
PURPOSE:To form a capacitor having excellent performance by a simple process, and to improve the degree of a function or specifications by forming the capacitor by utilizing a region shaped for forming an active element to a semiconductor base body. CONSTITUTION:Thick field oxide films 18 formed by LOCOS (localized oxidation) and surface oxide films 20 are shaped on the surface of an epitaxial layer 12. The epitaxial layer 12 is isolated into insular regions a1, a2 by p<+> type isolation layers 16. A p type conductive impurity is diffused selectively in each region a1, a2. An n type conductive impurity is each diffused selectively to one part in a p type diffusion layer 22 and one part of the n<-> type epitaxial layer 12 in high concentration. An oxide film 20a is shaped thinly on the surface of the p type diffusion layer 22 in the region a1, and polycrystalline silicon 30 is attached selectively onto the oxide film 20a. The p type conductive impurity is diffused selectively to one part of the p type diffusion layer 22 in the region al in high concentration to form a p<+> type diffusion layer 32. An electrode by an aluminum wiring 40 and a wiring are formed. |
