发明名称 |
METHOD OF PRODUCING METAL-OXIDIZED FILM-SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
A CMOS process is described which is particularly suited for forming dynamic memory cells. The cells are formed in an n-well and a single plate member formed from a first layer of polysilicon is used for the entire array. Unique etching of the first polysilicon layer prevents stringers from occurring when the second layer of polysilicon is deposited. A tri-layer dielectric is used for the capacitors in the array. Novel "rear-end" processing is disclosed using a phosphorus doped glass. |
申请公布号 |
JPS6038866(A) |
申请公布日期 |
1985.02.28 |
申请号 |
JP19840145287 |
申请日期 |
1984.07.14 |
申请人 |
INTEL CORP |
发明人 |
MAAKU TEI BOOA;KEN KEI YU;REO DEI YAU;SHIYAAMU JII GAAGU |
分类号 |
H01L27/10;H01L21/033;H01L21/306;H01L21/334;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/088;H01L27/092;H01L27/108;H01L29/78 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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