| 摘要 |
PURPOSE:To shorten the write time of a bipolar memory circuit with a simple circuit constitution by increasing the current, which is flowed to a digit line, with a current control circuit provided with a current mirror circuit in the output side. CONSTITUTION:When a write signal WE' impressed to a current control circuit 2 becomes low-level, and the write state is detected, differential transistors TRs Q101 and Q102 which compare a reference voltage and a write voltage with each other are turned on and off respectively. TRs Q104-Q106 constituting the output-side current mirror circuit are turned on, and a current I0 is outputted, and currents flowed to a pair of digit lines are increased to improve the current suction capability of memory cells. Thus, the write time of the bipolar memory circuit is shortened with a simple circuit constitution to make the write speed higher. |
