| 摘要 |
PURPOSE:To simplify the process and facilitate high integration by a method wherein an N<+>-P<+> junction is formed by adhesion of the mixed substance of a metallic base containing elements serving as a P type impurity and an N type impurity on a semiconductor substrate. CONSTITUTION:Si, Zn and W are evaporated on a semi-insulation GaAs substrate 1 by the RF sputtering method at the same time. Next, the alloying of W, Zn and Si is contrived by high temperature annealing, and at the same time the diffusion of Si and Zn is carried out into the substrate. Since the coefficient of Zn diffusion is larger than that of Si, a deep diffused part becomes a P<+> type Zn diffused region 2 compensated by Zn, and a shallow part becomes an N type Zn-Si region 3 of large Si compensation. The N-side metal 4 and the P-side metal 5 work as the N-side electrode and a P-side electrode, respectively. This manufacture enables to produce the titled element only at a time of diffusion, and besides suffices the electrode formation after diffusion at once, since the diffusion source for N<+> and P<+> impurities are metal bases. High integration is facilitated in the respect of element isolation. |
