| 摘要 |
PURPOSE:To adjust the central light emitting wave length exactly to specified value by a method wherein, in a double heterojunction type semiconductor light emitting element, thin layers with band gap smaller than an energy equivalent to specified light emitting wave length is provided on both sides of an active layer. CONSTITUTION:An N type AlGaAs layer as the first clad layer 2, the first thin layer 3, an active layer 4, the second thin layer 5 respectively made of AlxGa1-xAs, a P type AlGaAs layer as the second clad layer 6, a P type GaAs cap layer 7 are laminated on an N type GaAs crystal substrate 1. The band 9 of the thin layers 3, 5 is made smaller than that of the active layer 4. The energy level will rise steeply toward the region of active layer 4 due to existence of the thin layers 3, 5 providing the active layer with a flat region. Most of the carriers implanted in the active layer region may transit between bands with even energy gap to be recoupled while light may be emitted at nearly single wave length with the central wave length of the emitted light exactly adjusted to (x) value of the active layer 4. |
