| 摘要 |
PURPOSE:To form high concentration N<+> type conductive layers to be used as a source part and a drain part with high precision, having favorable reproducibility and by selfalignment up to the the neighborhood of a gate electrode at a Schottky barrier gate field effect transistor. CONSTITUTION:Mo is evaporated by sputtering, and a gate pattern 21 and a mask 22 to cover the peripheral part of an FET are formed on the plasma nitride film 23 of an N type active layer 5 according to parallel electrode type dry etching using a photo resist pattern as a mask. Si<+> ions are implanted through the plasma nitride film 23 using the Mo patterns 21, 22 thereof as masks to form high concentration conductive layers 6. Then crystallinities of the active layer 5 and the high concentration conductive layers 6 are recovered by heat treatment [the figure (d)], a silicon oxide film 24 is covered thereon as a coating film, and a photo resist film 26 is applied to be dried. The surface of the photo resist film 26 is smoothed, and the photo resist film 26 on the gate pattern 21 is thinned. The whole surface is etched according to parallel electrode type dry etching to expose the Mo gate pattern 21. |
