| 摘要 |
PURPOSE:To contrive to form an MOSFET to be formed on a substrate in a fine type, and to form a semiconductor device to be constructed by forming the MOSFET in a small type to be integrated by a method wherein after impurity ions and high melting point metal ions are implanted continuously to the surface part of the substrate using a gate electrode as a mask, heat treatment is performed to form source, drain regions, and at the same time, high melting point metal silicides are formed in this regions. CONSTITUTION:SiO2 films 7 are provided according to thermal oxidation, etc. on the side parts of a gate electrode 6 to protect the gate electrode 6. B ions are implanted using an SiO2 film 4 and the gate electrode 6 as masks in succession, and moreover high melting point metal ions, Mo ions for example, are implanted. Accordingly, B ions and Mo ions are implanted in the nearly same region in the substrate 1. Then the whole of the substrate 1 is heat-treated to form P type source, drain regions 8, 9 of shallow junction depths. At the same time, implanted Mo and Si constructing the substrate 1 are alloyed in the source, drain regions 8, 9 thereof to form Mo silicides, and sheet resistances of the source, drain regions 8, 9 are reduced extremely. After then, an interlayer insulating film 10 consisting of PSG, etc. is provided on the whole surface of the substrate. |
