| 摘要 |
<p>The specification discloses a low temperature process for depositing oxide layers on a substrate by photochemical vapor deposition, by exposing the substrate to a selected vapor phase reactant in the presence of photochemically generated neutral (unionized) oxygen atoms. The oxygen atoms react with the vapor phase reactant to form the desired oxide, which deposits as a layer on the substrate. The use of photochemically generated neutral oxygen atoms avoids damage to the substrate due to charge bombardment or radiation bombardment of the substrate. The deposited oxide layer may optionally incorporate a selected dopant material in order to modify the physical, electrical, or optical characteristics of the oxide layer.</p> |
