发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the corrosion of a second layer wiring from the intrusion of moisture through a through-hole in a second layer insulating film by forming a second mask guide for aligning the through-hole and the second layer wiring on a first layer insulating film at a position separate from a first mask guide at the same time as the second layer wiring while using the first mask guide as a reference. CONSTITUTION:GB1 and GB2 in second mask guides are formed so as to be each aligned on first mask guides GA1, GA3. CVD.SiO2 or PSG is deposited on the whole surface to form a second layer insulating film (an insulating film for protection) 6, and a through-hole 9 for a bonding pad 14 is bored to one part of the second layer insulating film 6 through photoetching. A second mask guide GB3 is used in order to mutually align the through-hole 9 and a second layer wiring 5. A small through-hole 15 is bored to the second layer insulating film 6 on the second mask guide GB3 by a guide pattern on the mask side on the mask alignment. On the other hand, through-holes are not bored on other second mask guides GB1, GB2. GB3 is formed at a position sufficiently separate from the second layer wiring.
申请公布号 JPS6037148(A) 申请公布日期 1985.02.26
申请号 JP19830144979 申请日期 1983.08.10
申请人 HITACHI MAIKURO COMPUTER ENGINEERING KK;HITACHI SEISAKUSHO KK 发明人 TAKAHASHI HIDEKAZU
分类号 H01L21/3213;H01L21/31;H01L21/314 主分类号 H01L21/3213
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