| 摘要 |
PURPOSE:To select emitting direction of laser beams arbitrarily by a method wherein, in a disc composed of multiple semiconductor layers containing doublehetero structure, gratings are provided on the interface of a semiconductor layer while multiple striped current regions extending in the radial direction are further provided. CONSTITUTION:An InGaAsP active layer 3, a P type InP clad layer 4, an N type InGaAs cap layer 5 are successively epitaxial-crystal grown and a P type impurities ar diffused to form a striped current implanting region 6 extending in the radial direction and electrodes 7, 8 are fixed. The substrate 1, the active layer 3 and the clad layer 4 are formed into a doublehetero structure. The cycle of gratings 2 is selected to meet the Bragg requirements between the beam waves propagated in the active layer 3. The laser beams may be emitted arbitrarily in the radial direction by means of providing said region 6 on the position properly selected in the circumferential direction of a disc. |
