| 摘要 |
PURPOSE:To prevent a semiconductor substrate formed with uneven parts on the main surface from damage by a method wherein after recesses and protrusions are formed on the main surface of the semiconductor substrate, the semiconductor substrate is etched by alkali to form roundness at the corner parts of the surfaces of the protruding parts. CONSTITUTION:Oxide films are adhered to the necessary parts of a semiconductor substrate as performed usually, and after the substrate is made to be in the condition removed with the unnecessary parts totally, an aqueous solution formed by alkali solution such as potassium hydroxide (KOH), etc. for example, in water of the same weight is heated, and the semiconductor substrate is dipped in the alkali aqueous solution thereof. The semiconductor substrate thereof is pulled up, and rinsing is performed sufficiently and dried. Accordingly, when alkali etching is performed, the corners of the protruding parts provided to the semiconductor substrate are made to bear roundnesses smoothly. Thickness of the whole of the surface of the semiconductor substrate is not reduced, and etching is performed only to the corner parts. It is favorable to form the alkali aqueous solution with potassium hydroxide (KOH) and water by 1:1 of the weight ratio. |
