| 摘要 |
PURPOSE:To form a nonlinear resistance element for a display device being stable and having a small variation with time by a method wherein a metal layer is formed on a semiconductor layer, and an attack onto the semiconductor layer according to a postprocess is checked by covering on the semiconductor layer with the metal layer. CONSTITUTION:A P type semiconductor layer 14, an I type semiconductor layer 15 and an N type semiconductor layer 16 are formed on a first electrode 13, B is mixed as an impurity in the P type semiconductor layer 14, and moreover P is mixed as an impurity in the N type semiconductor layer 16. As the semiconductor layers, silicon, silicon germanide, silicon carbide or silicon nitride can be enumerated. After the semiconductor layes 14-16 thereof are formed, by forming a metal layer 17, stabilization of the semiconductor layers is enhanced, and the semiconductor layers are made to be in the condition not invaded by a treating liquid or treating gas at a photolithography process and an etching process. The metal layer 17 is Al, Cr or Ni. |
