发明名称 FET Controlled thyristor
摘要 A thyristor has an n-emitter provided with a cathode, a p-emitter provided with an anode, and two base layers respectively adjacent thereto. Further, an auxiliary emitter serves the purpose of internal current gain. High ignition sensitivity is strived for in addition to good stability. To this end, a connectible auxiliary emitter is provided next to the auxiliary emitter, forming a three-layer structure together with the base layers with a higher current transfer ratio for the charge carriers emitted by it than the auxiliary emitter. In order to produce a high ignition sensitivity, the connectible auxiliary emitter is conductively connected to the auxiliary emitter via a semiconductor switch. The area of employment comprises trigger-sensitive thyristors with high di/dt and dU/dt stability.
申请公布号 US4502072(A) 申请公布日期 1985.02.26
申请号 US19820345925 申请日期 1982.02.04
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 HERBERG, HELMUT
分类号 H01L29/10;H01L29/74;H01L29/749;H03K17/73;(IPC1-7):H01L29/74;H01L27/02;H01L29/167;H01L29/78 主分类号 H01L29/10
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