发明名称 CIRCUITO INTEGRATO
摘要 <p>An integrated circuit comprising an inversely operated static induction transistor capable of performing very high speed operation at low power dissipation. In an integrated injection logic circuit, at least one of the injection and the output transistor is formed of a static induction transistor which has small storage effect of minority carriers in the channel region.</p>
申请公布号 IT1065020(B) 申请公布日期 1985.02.25
申请号 IT19760030181 申请日期 1976.12.06
申请人 ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI 发明人
分类号 H01L29/80;H01L21/8222;H01L27/02;H01L27/06;H01L27/07;H01L27/098;H01L29/739;H03K19/091;H03K19/094;(IPC1-7):H01L/ 主分类号 H01L29/80
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