| 摘要 |
PURPOSE:To obtain a structure of a high efficiency of photo utilization in the title device wherein a film-form photoelectric conversion region is directly adhered to the curved surface of a substrate, and then a curved surface like a roof tile is provided. CONSTITUTION:The photoelectric conversion regions 2, 2... present film forms of micron order by the successive lamination of, e.g. from the substrate 1 side, clear electrode films 3, 3... of Sn oxide and the like, amorphous semiconductor films 4, 4... equipped with semiconductor junctions therein, and back surface electrode films 5, 5... of aluminum and the like in ohmic contact with said films 4, 4.... Each of the films 4, 4... has the adhesion by successive lamination of P type and I type and N type layers from the photo receiving surface side in order to form a parallel P-I-N junction therein, e.g., in the film surface; therefore, in the presence of light incidence through the substrate 1 and the films 3, 3..., electrons and holes of free generate mainly in the I type layer. Such electrons and holes are attracted to the P-I-N junction field each layer forms, and then collected to each film 3, 3... and 5, 5.... Accordingly, the power electrically added to each other by the superposition of the films 3, 3... and 5, 5... of the adjacent regions 2, 2... is taken out. |
