| 摘要 |
PURPOSE:To reduce the manufacturing process and prevent the short channel effect of an N-channel transistor and the punch-through by a method wherein the part other than the source-drain regions of said transistor is covered with a photo resist film, and an impurity is ion-implanted to the regions. CONSTITUTION:BF or BF2 ions 7 are implanted to both the source-drain regions of a P-channel transistor and the N-channel one. Next, the part other than the source-drain regions of the N-channel transistor is covered with the photo resist film 8, and arsenic ions 10 are implanted with this film 8 as a mask. Then, the film 8 is removed with O2 plasma, and further annealing is carried out. By this process, BF or BF2 the source-drain impurity of the P-channel transistor and arsenic that of the N-channel transistor are activated, and the impurities are diffused so as to reach a desired junction depth. |
