| 摘要 |
PURPOSE:To obtain a high-density bubble memory element having excellent operation characteristics by removing part or the whole of a minor loop part of resin before ion etching. CONSTITUTION:The bubble memory element is a 4Mb bubble memory element with a 1.2mum domain diameter and consists principally of a major loop 31, generator 32, eraser 33, detector 34, and gate 36, but has a minor loop part 35 shown by a broken-line frame 44; this minor loop part 35 is reduced in spacer film thickness, and interpattern pitch is 5mum mainly inside of the broken line and 10mum outside of the broken line. Namely, the space is made thin only at the minor loop part which determines storage capacity and a ''Permalloy'' pattern is made small to increase the density; and the pattern is made large at the part where the space film thickness is large such as a major loop to obtain sufficient characteristics easily. |
