| 摘要 |
PURPOSE:To prevent the generation of cracks on an insulating film caused by oscillation of bonding by a method wherein at least the first layer insulating film is formed in such a manner that the insulating film will be superposed on the lower layer metal film at the circumferential part of a bonding pad part. CONSTITUTION:An interlayer insulating film 10 consisting of PSG is superposed on the circumferential part of a bonding pad under layer film 3 consisting of the first layer aluminum, and the bonding pad upper layer film 6 consisting of the second layer aluminum is integrally connected to the underlayer film 3. A PSG protective insulating film 12 is covered on the insulating film 10 and the second layer aluminum wiring, and they are superposed on the circumferential part of the bonding pad upper layer film 6. As a resutl, the bonding pad can be fixed in a pressed down form by slightly overlapping, the aluminum film is not shifted, and the micro vibration generated when a supersonic electric oscillation wire bonding is performed on a gold wire 8 is made harder to reach the interlayer insulating film 10, thereby enabling to improve dampproof property and the reliability of the semiconductor device. |
