| 摘要 |
PURPOSE:To prevent the punch-through between the source region or the drain region of an MISFET and a semiconductor substrate by a method wherein an IC equipped with a CMIS is formed by making respective impurities generate diffusion from the first and second semiconductor regions into an epitaxial layer. CONSTITUTION:Heat treatment is carried out, a p<+> type impurity being then diffused by elongation, and accordingly the p<+> type source or drain region 21 constituting a p type MISFET is formed in the n type well region of the CMIS. The diffusion in the first semiconductor region 2A, a buried layer 3A, the second semiconductor region 4A, and the epitaxial layer 6 of an isolation region 5A further advances by various kind of processes of heat treatment in the conventional process. In particular, the second semiconductor region 4A and the isolation region 5A, because of their high diffusion speeds, have the structure of degeneration formed by the first electric connection of the n type well region 13 of the CMIS to the second semiconductor region 4A, and the structure of isolation is formed by the first electric connection of a channel stopper region 15 to the isolation region 5A. |
