| 摘要 |
PURPOSE:To obtain an electrode having a favorable characteristic at low cost without using noble metals at manufacture of a semiconductor device by a method wherein the bump electrode to be provided to the semiconductor device is made to have the three layer construction of an Al layer, an Ni layer and an Ag layer from a semiconductor substrate. CONSTITUTION:An oxide film 6 is adhered on a semiconductor substrate 5 having a diffusion layer 7, and an opening is dug corresponding to the diffusion layer 7. Then an Al layer 13 is adhered making to come in contact with the diffusion layer 7, and making to exist nearby the opening edge part of the film 6, and an Ni layer 14 is laminated thereon. After then, an Ag layer 12 having the smaller shape than the layer 14 at the under part, while extended at the top part is adhered on the layer 14 to be used as a bump electrode. At this time, the Al layer 13 and the Ni layer 14 are formed according to the evaporation method, and the Ag layer 12 is formed according to the electrically plating method. Accodingly, the ohmic property of contact to the diffusion layer 7 is improved by using Al, and moreover adhesion of the Ag layer is also facilitated by making Ni to be interposed between them. Moreover, because the use of Pt, Au, etc. is unnecessitated, cost is reduced. |
