| 摘要 |
PURPOSE:To eliminate a light incidence window and the like and deposit a solid thin film on a substrate with high speed by a method wherein hydrogen radicals are produced by electromagnetic energy of a high power microwave and radical reaction between material gas molecules and the hydrogen radicals are generrated. CONSTITUTION:A hydrogen radical producing tube 4 is surrounded by a surrounding apparatus to which a cooling water inlet 5 is provided. An inlet tube 1 through which hydrogen gas, diluted by a diluting gas, is introduced, an Ebenson type resonance oscillator 2 which generates a microwave and an optical trap 3 are provided to the hydrogen radical producing tube 4. A tube protruding from an opening at the center part of the tube 4 is inserted into a reaction chamber 9. An inlet tube 6 through which a material gas such as SiH3F is introduced, a high vacuum evacuator 11 with a valve 13, a substrate 7 holding part heated by a heater 8 and a large capacity exhausting equipment 10 with a valve 12 are provided to the reaction chamber 9 and hydrogen radicals produced in the tube 4 is sent into the reaction chamber 9. With this constitution, the reaction of SiH4F+H SiH3+HF is generated and a hydrogen system amorphous Si film is deposited on the substrate heated to 250-300 deg.C. |
