| 摘要 |
PURPOSE:To suppress the coming off of a material gas, adsorbed by an inner wall of a reaction tube, into a growing atmosphere by a method wherein a tube wall of a crystal growth reaction tube to which a gas inlet and a gas outlet are provided is surrounded by the 1st outside wall and the 2nd outside wall and a fluid whose temperature is lower than the room temperature is supplied between the tube wall and the 1st outside wall and a fluid whose temperature is the same as or higher than the room temperature is supplied between the 1st outside wall and the 2nd outside wall. CONSTITUTION:A gas inlet 1 through which a material gas and a carrier gas are taken in and a gas outlet 2 through which decomposed products of the material gas and unreacted gas are exhausted out are provided to a reaction tube. A substrate holder 6 is inserted into the reaction tube to perform a prescribed crystal growth. A tube wall W1 of the reaction tube is surrounded by the 1st outside wall W2 and the 2nd outside wall W3 and a high frequency coil 5 for substrate heating is wound around the outside wall W3. Water whose temperature is lower than the room temperature is supplied through a water inlet 3 provided to the outside wall W2 and water whose temperature is the same as or higher than the room temperature is supplied through a water inlet 8 provided to the outside wall W3. |
