| 摘要 |
PURPOSE:To improve the degree of integration of a PROM by making an output transistor, in which the short sides of rectangular emitter and base electrode windows are opposed to the long side of a rectangular collector electrode window, to contain in a word line select circuit. CONSTITUTION:The short sides of electrode windows E', B' for emitters and bases are opposed to the long sides of electrode windows C1', C2' for collectors in output transistors 5'-1, 5'-2 for a word line select circuit. 2-1-2-4 represent cell groups, left and right the direction of a word line and the upper and lower sides the direction of a digit line. Consequently, when the electrode windows for the collectors are formed to the sides, the repetitive periods of patterns for the word line select circuit are shortened, and the patterns can be aligned are disposed to patterns for slender collector regions in the cell sections. Accordingly, arranging regions among the word line select circuit section and the cell sections which have been required particularly are unnecessitated. A PROM, the degree of integration thereof is improved, is obtained because an effect on the operation of the circuit by such arrangement of the electrode windows can also be ignored. |
