| 摘要 |
A multilayer circuit consists of two layers of aluminium conductor on a silicon semiconductor body and spaced apart by silicon oxide. The lower layer (2) of aluminium is given a surface coating of a material (12) consisting of titanium and tungsten to inhibit the formation of projecting nodules of aluminium when the silicon oxide is formed at a raised temperature. The upper layer (4) of aluminium is laid on to a flat surface of silicon oxide (7) which is leveled by an etching process, any variations in the original surface of the oxide being filled prior to etching. |
