| 摘要 |
PURPOSE:To enhance dry etching speed and producibility of a mask by forming a thin film substantially made of at least one of W, Ta, and Ti on a support. CONSTITUTION:A thin film made of at least one of W, Ta, and Ti having 50- 500nm thickness and a ratio of optical density to film thickness of about 3/ 100nm at 436nm wavelength is formed on a support, such as soda glass plate, to form a mask material used for dry etching. Nitrogen and oxygen may be contained in said thin film in an amt. of <=about 50atom% and <=30atom%, respectively. |
