| 摘要 |
PURPOSE:To easily obtain the titled mask material good in electric conductivity and capable of a high precision pattern by depositing Cr from the vapor phase to a base in an atm. contg. N2 and/or O2. CONSTITUTION:Cr is deposited from the vapor phase to a base, such as transparent glass plate, heatd to about 150-400 deg.C by sputtering, vacuum evaporation, etc. in an atm. of an inert gas contg. N2 and/or O2, such as (i) a partial N2 pressure of 5-30vol%, (ii) a partial O2 pressure of 5-10vol%, or (iii) partial pressures of N2 of 10-20vol% and O2 of 3-5vol%. The obtained mask material has a specific resistivity of 1X10<-4>-1X10<-3>cm.OMEGA, having conductivity high enough to prevent electrostatic charge during depicting an image with electron beams. |
