| 摘要 |
PURPOSE:To obtain no-break diffused layer formed by ion implantation even if semiconductor elements have deep slots crossing each other on them, by providing a stage which rotates a wafer set at a predetermined angle in an ion implantation sample chamber. CONSTITUTION:After a sample 4 is brought onto a sample stage 1, the sample is fixed on the stage and the stage, the sample stage 1, is placed at right angle to an ion beam. Ion implantation is performed while a stage 2 is rotated by a drive unit 5 attached on the side of the sample stage 1 opposite to the sample 4 and engaged with the stage 2. By performing ion implantation using such as ion equipment provided with an above described mechanism, no-break diffused layers are obtained and ion implantation into the objective part can be surely performed. |
