| 摘要 |
PURPOSE:To form a thin film having excellent quality, in forming the thin film by decomposing reaction gas, by utilizing discharge, which is formed by using the reaction gas or carrier gas as discharge gas, as decomposition energy. CONSTITUTION:A discharge chamber 9 and a reaction chamber 11 are arranged through a transparent partition wall 16 and a glass substrate 17 coated with a transparent conductive film 2 comprising an In-Sn oxide film is introduced into the reaction chamber 11. A gaseous mixture consisting of SiH4, CH4 and H2H6 in a ratio of 1:0.2:0.01 is flowed on the transparent conductive film 2 by using H2 as carrier gas. H2 gas is flowed between discharge electrodes 10, 10 in the discharge chamber 9 to perform plasma discharge and the generated light is incident to the reaction chamber 11 through the transparent partition wall 16 to react the gases in the reaction chamber 11 and a P type amorphous Si-layer 3 is formed. Succeedingly, an I type amorphous Si layer 4 is similarily formed from SiH4 gas and reactive gases consisting SiH4 and PH3 in a ratio of 1:0.01 are flowed by using H2-gas as carrier gas and a N type layer 5 is formed to obtain a Pin structure while an Al electrode 8 is formed to produce a solar cell. |
