| 摘要 |
PURPOSE:To prevent leakage currents between electrodes by laminating an insulating film and a semiconductor thin-film onto a gate electrode layer and arranging a source electrode and a drain electrode on the surface of the semiconductor thin-film. CONSTITUTION:A mask 23 consisting of a resist material is executed in a desired region, and a section to which the mask 23 is not executed is etched selectively only by predetermined thickness (t). A gate electrode layer 14 composed of a conductive gate electrode section 12 corresponding to a mask section and an insulating oxide section 13 in an undesirable region is formed, and the flat electrode layer 14 is disposed and shaped onto a substrate 11 by removing the mask. An insulating film 15 consisting of an SiO2 film and a semiconductor thin-film 18 are laminated on the electrode layer 14, and the thin-film 18 is formed from an undoped amorphous silicon film 16 and an impurity-doped N<+> amorphous silicon film 17. The thin-film 18 is etched to a prescribed pattern, and a source electrode 20 and a drain electrode 21 are shaped. Accordingly, leakage between electrodes can be prevented. |
