| 摘要 |
Disclosed herein is a deposition process which comprises, in an air-tight reaction vessel, generating a plasma through a discharge gas by means of a discharge system, disposing a substrate at a position apart from the plasma by a distance greater than the mean free path of species produced by the plasma in such a state that the substrate can be exposed directly to light radiated from the plasma, feeding a carrier gas and photoreactive gas in such a manner that they flow along the substrate, and causing the photoreactive gas to undergo a reaction by the light from the plasma to deposit the reaction product on the substrate. In the deposition process the substrate and a film deposited thereon are prevented from contamination or damage by charged particles. Electrodes are kept free from deposition of the reaction product, thereby allowing to conduct the deposition operation for a long period of time without need for cleaning them frequently.
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