Semiconductor devices utilizing eutectic masks

摘要

A method is described for making self-aligned doped regions in a body of semiconductor material by means of an in situ eutectic mask formed by the selective removal of one of the phases of a metallic eutectic solidifed as a thin film having a lamellar morphology. The elements of the in situ mask may also be utilized as metallic contact lines or interconnecting metallic stripes of a semiconductor device.